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MOCVD
GaN Epitaxial
Growth
Photolithography
p-Electrode Formation by Sputtering
Creating p-electrode by sputtering Palladium (Pd) and Platinum (Pt)
Substrate Polish
Polish away GaN substrate from the back side to be 100 µm thick
Formation of n-Electrode
Sputter Titanium (Ti), Platinum (Pt), and Gold (Au) subsequently to create n-electrode
Dicing
Cut the substrate into each chip
Dry Cleaning
Laser Diode Mount
Plasma cleaning before mounting Laser Diode chip and wire bonding
Laser Diode