> Etching Systems
> RIE (Reactive Ion Etching) Systems
> RIE-200NL
RIE-200L dry etching system is designed as a load-locked version of the highly popular RIE-10NR. The RIE-200NL yields excellent etching patterns with minimum side etch for a wide variety of materials such as metals, compound semiconductors (GaAs, GaN, etc.), silicon and poly-silicon.
The system achieves high selectivity for a broad range of mask materials. The RIE-200NL comes with a user friendly computer control system that enables the operator to easily create, edit, store and manage etch recipes.
Dimensions:
Main Unit: 546(W) x 1533(D) x 1580(H) mm
Pump Unit: 540(W) x 540(D) x 520(H) mm
Provides the capacity to process five 3" wafers, three 4" wafers or one 8" wafer in a compact design
The process chamber is isolated from the environment by a load-lock chamber, which improves process reliability and accuracy
Affordable pricing that ensures maximum cost effective performance
Configured to achieve high speed evacuation of the reaction chamber during the etch process.
Superior anisotropic etching performance for silicon films used in ULSI devices
Etching of various metal films
Etching of compound semiconductors such as GaAs, GaN, etc.
Production of waveguide devices
Fabrication of micromachines
