RIE-300NR

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Reactive Ion Etching System
RIE-300NR is a high-performance, fully automatic, high precision Reactive Ion Etching system, designed for processing 300mm wafers. A computerized touch panel provides a user-friendly interface for parameter control and recipe storage.
Etching is performed with minimum sidewall deterioration and a high selectivity between materials. The RIE-300NR chamber is equipped with four-directional pumping mechanism that maximizes uniformity.

Dimensions:

Main Unit: 850(W) x 1680(D) x 1913(H) mm

Pump Unit: 590(W) x 170(D) x 230(H) mm

Process wafers up to 12" in diameter (Twelve 75mm wafers, eight 100mm wafers or three 150mm wafers)
Fully automatic "One-button" operation with full manual override
Highly selective anisotropic etching
Easy to use computerized touch panel for parameter control, recipe entry and storage

Anisotropic etching of all types of silicon-based films, compound semiconductors and refractory metals including Si, SiO₂, Poly-Si, SiN, GaAs and Mo
Manufacturing of micromachines
Stripping passivation, SiN and Oxide layers perfectly for semiconductor failure analysis