RIE-200iP

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Inductively Coupled Plasma Etching System
RIE-200iP is robust and flexible load-locked etching system designed for R&D and pilot production. The system utilizes SAMCO's proprietary "Tornado Coil Electrode" to efficiently generate stable, high density plasma which ensures high selectivity, precision and excellent uniformity. The system also features SAMCO's unique multi-port exhaust system which provides a uniform gas flow over the wafer and maximizes gas conductance.
With customized specifications for silicon, metal, and III-V compound semiconductor materials, the RIE-200iP provides an industry leading level of versatility and performance.

Dimensions:

Main Unit: 1000mm (W) x 1375mm (D) x 1665mm (H)

Capable of processing up to 6" wafers (8" optional)
Load-lock chamber allows chlorine chemistry use
Active wafer temperature control (Helium backside cooling)
Proprietary Tornado ICP high density plasma source
Multi-port vacuum system for improved uniformity and conductance
ESC with active wafer temperature control (Helium backside cooling)
Metal etching process kit for repeatable metal etching
Recipe storage and data logging
Small footprint and "all-in-one" design

Anisotropic etching of all types of silico-based films for ULSI devices
Etching of GaAs, GaN, InP and other compound semiconductor materials
Fabrication of high speed devices
Fabrication of power devices (MMIC, HEMT etc)
Fabrication of communication devices such as SAW filters
Fabrication of waveguide devices
Etching of metal films