> Etching Systems
> ICP (Inductively Coupled Plasma) Etching Systems
> RIE-600iP
The RIE-600iP is an ICP (Inductively Coupled Plasma) etching system capable of generating a high density plasma. The system features a high conductance vacuum system coupled with precise pressure control to allow processing at both low and high pressures, and low and high gas flows. Furthermore, with a newly developed Tornado ICP coil, maintaining stable plasma at high RF powers and high vacuums is now possible. Together, these features provide users the widest process window available.
Dimensions:
993mm (W) x 1511mm (D) x 1750mm (H)
Newly developed Tornado ICP coil enables stable processing at high RF powers and low pressures.
High capacity vacuum system allows low processing pressure even with high gas flows.
Height-adjustable lower electrode (air operated) enables optimization of the distance between the wafer and ICP plasma source.
High voltage ESC (electrostatic chuck) allows for clamping of non-conductive substrates such as quartz.
Easy maintenance design.
Trench, via hole, and SiO2 mask formation for SiC power device fabrication
Fabrication of optical devices such as optical waveguides and micro lenses
Production of micro channels
Production of various sensors
