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  • Etching Systems
    • ICP Etching Systems
      (Inductively Coupled Plasma Etching)
    • DRIE Systems
      (Deep Reactive Ion Etching)
    • RIE Systems
      (Reactive Ion Etching)
  • CVD Systems
    • PECVD Systems
      (Plasma Enhanced CVD)
    • LS-CVD Systems
      (Liquid Source CVD)
  • Cleaning Systems
    • UV-Ozone Cleaners
    • Plasma Cleaners
      (Direct Plasma)
    • Plasma Cleaners
      (Remote Plasma)
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  • LED
    (Light Emitting Diodes)
  • LD
    (Laser Diodes)
  • MEMS
    (Microelectromechanical Systems)
  • TSV
    (Through Silicon Vias)
  • Power Devices
  • SAW Devices
  • RF Devices
  • Photonic Crystals
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  • Optoelectronics
  • Electronic Components
  • Silicon
  • Surface Treatment
  • Display Devices
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  • Etching
    • Tornado ICP®
    • Bosch Process
    • GaN Power Device Etching
    • GaN / AlGaN Etching
  • Deposition
    • LS-CVD
  • Cleaning
    • Reversible Electrode Shelf
    • Remote Plasma Sources
    • Chemical vs Physical Cleaning
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  • Product Information
  • Careers

As a leading supplier of GaN power device etching solutions, samco-ucp systems and process technology provide high uniformity, low damage etching with excellent etch-rate control and precision endpoint detection.

4) High Uniformity Etching on 150 or 200mm Wafers(+/- 3%)
High uniformity allows accurate etch depth control over the entire wafer.

5) Low Damage Processing
Hardware optimized for low BIAS power processing reduces plasma damage and improves device performance.

• AlGaN recess etching (~10nm)
• GaN/AlGaN high selectivity etching
• GaN trench etching (~1μm)
• GaN isolation etching (~5μm)
• GaN MESA etching (~100nm)

• Load-locked ICP etcher (RIE-200iP) information
• Cassette-to-cassette ICP etcher (RIE-200iPC) information
• samco-ucp technical note - "Breakthrough for next generation power devices"
• Research paper - "GaN MOSFET with SiO₂ Gate Oxide Deposited by Silane-Based PECVD