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GaN Power Device Etching

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As a leading supplier of GaN power device etching solutions, samco-ucp systems and process technology provide high uniformity, low damage etching with excellent etch-rate control and precision endpoint detection.


Key Capabilities

1) Repeatable Low-rate Etching (AlGaN: ~1nm/min)
Repeatable run-to-run etch-rates from 1nm/min facilitate precise depth control.
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      Low Rate GaN Etching

2) High GaN/AlGaN Selectivity Etching (GaN/AlGaN 100:1)
Achieve etching-stop on the AlGaN interface without over-etching.
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      High GaN/AlGaN Selectivity

3) Precision Depth Measurement and Endpoint Detection
Accurately endpoint AlGaN recess etches to the nanometer (eg 27nm etched).
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  Precise GaN Etching Depth Control

4) High Uniformity Etching on 150 or 200mm Wafers(+/- 3%)
High uniformity allows accurate etch depth control over the entire wafer.

5) Low Damage Processing
Hardware optimized for low BIAS power processing reduces plasma damage and improves device performance.

Applications


More Information


Contact Us

samco-ucp ltd.
Industriering 10 LI-9491 Ruggell Liechtenstein
Phone: 423-377-5959
Email: info@samco-ucp.com

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