Repeatable Low-rate Etching (AlGaN: ~1nm/min) by ICP Etching System

1) Repeatable Low-rate Etching (AlGaN: ~1nm/min) for Precise Depth Control

0.66nm/min low-rate etching achieved without any offset time. Key points:

• Offset-time has been eliminated even at low powers facilitating high run-to-run repeatability (offset is the time taken from the ignition of plasma to the start of AlGaN etching)
• Repeatable plasma discharge at low RF powers is now possible through the use of an optimized RF generator and control system.

System: RIE-200iP