samco-ucp


High GaN/AlGaN Selectivity Etching (GaN/AlGaN 60:1) by ICP Etching System


2) High GaN/AlGaN Selectivity Etching (GaN/AlGaN 100:1)

samco-ucp has developed process technology, assisted by reaction chamber optimization, to achieve high GaN/AlGan selectivity.
By adjusting the amount of an additive gas, selectivity of 100:1 can be achieved allowing for a complete etch stop on AlGaN.

System: RIE-200iP