> Etching Systems > RIE (Reactive Ion Etching) Systems > RIE-10NR
Dimensions:
Main Unit: 500(W) x 920(D) x 1510(H) mm
Pump Unit: 522(W) x 163(D) x 216(H) mm
Highly selective anisotropic etching
Fully automatic "one-button" operation with full manual override
Easy-to-use computerized touch panel for parameter control, recipe entry and storage
Process wafers up to 8 inch diameter
Sleek, compact design uses minimal clean room space
Stripping of passivation materials including silicon nitride, silicon dioxide and silicon oxynitride
Anisotropic etching of all types of silicon-based films, compound semiconductors and refractory metals including Si, SiO2, Poly-Si, Si3N4, GaAs and Mo
Manufacturing of micromachines
Failure analysis