
> Etching Systems
> RIE (Reactive Ion Etching) Systems
> RIE-10NR
Dimensions:
Main Unit: 500(W) x 920(D) x 1510(H) mm
Pump Unit: 522(W) x 163(D) x 216(H) mm
Highly selective anisotropic etching
Fully automatic "one-button" operation with full manual override
Easy-to-use computerized touch panel for parameter control, recipe entry and storage
Process wafers up to ø8" in diameter
Sleek, compact design uses minimal clean room space
Stripping of passivation materials including silicon nitride, silicon dioxide and silicon oxynitride
Anisotropic etching of all types of silicon-based films, compound semiconductors and refractory metals including Si, SiO2, Poly-Si, Si3N4, GaAs and Mo
Manufacturing of micromachines
Failure analysis