> Technology
> Chemical vs Physical Cleaning
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Chemical Plasma Cleaning Selective removal by reaction between process gases and surface (mono) layers; very low temperature, no over etching, no redeposition (volatile reaction products) and no risk of substrate damage (strip, die, wafer). |
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Physical Plasma Cleaning Mechanical removal (sputtering) by ion bombardment, typically by Ar via bias voltage: high rate, elevated temperature, over etching, redeposition (on strip and chamber) and risk of physical substrate damage (strip, die, wafer). |
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