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Chemical vs Physical Cleaning

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figure1

Chemical Plasma Cleaning
Selective removal by reaction between process gases and surface (mono) layers; very low temperature, no over etching, no redeposition (volatile reaction products) and no risk of substrate damage (strip, die, wafer).

figure2

Physical Plasma Cleaning
Mechanical removal (sputtering) by ion bombardment, typically by Ar via bias voltage: high rate, elevated temperature, over etching, redeposition (on strip and chamber) and risk of physical substrate damage (strip, die, wafer).

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