> Etching Systems
> RIE (Reactive Ion Etching) Systems
> RIE-200C
RIE-200C dry etching system was designed as an automated version of the highly popular RIE-10NR for high volume manufacturing.
The RIE-200C is a high precision plasma reactive ion etching system that can be used to anisotropically etch all types of silicon based films. This system is a single wafer processing cassette-to-cassette etching machine.
Dimensions:
Main Unit: 750mm (W) x 1770mm (D) x 1600mm (H)
Automatic processing of 5", 6" or 8" wafers
Easy to use computerized touch panel enables fully automatic operation of the system, as well as management of process parameters
Equipped with a mapping sensor
Dual-arm robot that greatly reduces tact time
Configured to enable high speed evacuation of the reaction chamber during the etch process
Designed to minimize clean room space requirements
Superior anisotropic etching performance for silicon films used in ULSI devices
Etching of refractory metal films
Fabrication of light waveguides
Fabrication of micromachines
Manufacturing of various types of sensors
Processing of wafer level chip scale packages
