> Etching Systems > ICP (Inductively Coupled Plasma) Etching Systems > RIE-200iPC
Dimensions:
Main Unit: 1206mm (W) x 2015mm (D) x 2063.5mm (H)
Direct transfer of max. φ8" wafers
Cassette-to-cassette production type system
Active wafer temperature control (Helium backside cooling)
Electrostatic chuck for wafer clamping
Processing of multiple wafers possible using the tray cassette
Fully automatic operation using graphical touch panel screen
Data management and recipe management
Data logging is possible with use of an optional PC
Low-damage etching of GaN, GaAs, InP for production of electronic and light emitting devices
Etching of ferroelectric materials for memory devices
High-speed etching for micromachine production