> Etching Systems
> ICP (Inductively Coupled Plasma) Etching Systems
> RIE-800iP
The RIE-800iP is an ICP (Inductively Coupled Plasma) etching system capable of generating a high density plasma. The system features a high conductance vacuum system coupled with precise pressure control to allow processing at both low and high pressures, and low and high gas flows. Furthermore, with a newly developed Tornado ICP coil, maintaining stable plasma at high RF powers and high vacuums is now possible. Together, these features provide users the widest process window available.
Dimensions:
1000mm(W) ×1826mm(D) ×1850mm(H)
Newly developed Tornado ICP coil enables stable processing at high RF powers and low pressures.
High capacity vacuum system allows low processing pressure even with high gas flows.
Height-adjustable lower electrode (air operated) enables optimization of the distance between the wafer and ICP plasma source.
High voltage ESC (electrostatic chuck) allows for clamping of non-conductive substrates such as quartz.
Easy maintenance design.
High RF power and high etching rate process
(e.g. GaN high rate etching, full Si wafer etching
