CVD Systems


Plasma-Enhanced CVD System
The PD-220NL is a unique Plasma-Enhanced Chemical Vapor Deposition (PECVD) capable of depositing silicon based thin films (SiO2, Si3N4, SiOxNy, a-Si:H).
The system offers all of the standard features for PECVD in a very compact footprint. Films with superior thickness and refractive index uniformity can be deposited over a 230mm diameter area, with excellent batch-to-batch repeatability. A computerized touch-panel provides a user-friendly interface for parameter control and recipe storage.
The PD-220NL is ideal for depositing thin film for research and development as well as pilot production applications.


Main Unit: 590(W) x 1620(D) x 1670(H) mm

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  • Features
  • Applications
  • The system comes equipped with a load-lock chamber for enhanced process repeatability

  • Provides the capacity to process 8 or 9×ø2" wafers, 5×ø3" wafers, 3×ø4" wafers, or 1×ø8" wafer per cycle

  • Uniform deposition rate

  • Fully automatic "one-button" operation time with full manual override

  • Easy-to-use computerized touch panel for parameter control, recipe entry and storage (100 recipes total, 100 steps/recipe)

  • Supports the continuous execution of multiple processes such as cleaning process followed by deposition for greater process flexibility

  • Complete set of system interlocks to protect the system and operator

  • Deposition of silicon oxide (SiOx)

  • Deposition of silicon nitride (SiN)

  • Deposition of silicon oxy-nitride (SiOxNy)

  • Deposition of amorphous silicon (&galpha;-Si:H)

Contact Us

samco-ucp ltd.
Industriering 10 LI-9491 Ruggell Liechtenstein
Phone: 423-377-5959


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