PD-220NL

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Plasma-Enhanced CVD System
The PD-220NL is a unique Plasma-Enhanced Chemical Vapor Deposition (PECVD) capable of depositing silicon based thin films (SiO2, Si3N4, SiOxNy, a-Si:H).
The system offers all of the standard features for PECVD in a very compact footprint. Films with superior thickness and refractive index uniformity can be deposited over a 230mm diameter area, with excellent batch-to-batch repeatability. A computerized touch-panel provides a user-friendly interface for parameter control and recipe storage.
The PD-220NL is ideal for depositing thin film for research and development as well as pilot production applications.

Dimensions:

Main Unit: 590(W) x 1620(D) x 1670(H) mm

The system comes equipped with a load-lock chamber for enhanced process repeatability
Provides the capacity to process 8 or 9×ø2" wafers, 5×ø3" wafers, 3×ø4" wafers, or 1×ø8" wafer per cycle
Uniform deposition rate
Fully automatic "one-button" operation time with full manual override
Easy-to-use computerized touch panel for parameter control, recipe entry and storage (100 recipes total, 100 steps/recipe)
Supports the continuous execution of multiple processes such as cleaning process followed by deposition for greater process flexibility
Complete set of system interlocks to protect the system and operator

Deposition of silicon oxide (SiO_x)
Deposition of silicon nitride (SiN)
Deposition of silicon oxy-nitride (SiO_xN_y)
Deposition of amorphous silicon (&galpha;-Si:H)