> Cleaning Systems > UV-Ozone Cleaners > UV-2
Dimensions:
Main Unit: 610(W) x 572(D) x 426(H) mm
Accommodates a variety of wafer sizes up to 8 inches in diameter
Compact, uses minimum bench top space
Heated sample stage increases cleaning/stripping rates
Broad process temperature range (Ambient to 300°C)
Completely dry process and will not cause any electrical damage to circuits
Operates at atmospheric pressure - no vacuum system required
Drawer interlock system guarantees system is inoperable when drawer is open
Automatic nitrogen purging system purges the UV-2 chamber after every run
Built-in ozone catalyst ("ozone killer") unit
Sealed chamber during process prevents device contamination from atmospheric air
Removing organic contamination
Pre-clean wafers prior to deposition (e.g. GaAs prior to MBE, sapphire prior to HgCdTe)
Descumming photoresist and polyimide
Modifying surfaces for better adhesion
Final cleaning before wafer bonding
UV curing
Growth of thin stable oxide films (Ge, Si)
Cleaning of AFM tips