RIE-400iPB

> Etching Systems > DRIE (Deep Reactive Ion Etching) Systems > RIE-400iPB

Deep Silicon Etching System
The RIE-400iPB is an inductively coupled plasma RIE system that uses high-density plasma to perform high speed silicon etching required in the fabrication of MEMS and electronic devices. The system, capable of etching up to 4" wafers, was designed to provide all the high-performance features of the larger RIE-800iPB in an easy-to-use, easy-to-maintain, affordable package.
The RIE-400iPB also offers the ability to perform precise, highly controllable SiO2 etching with minimum changeover time. By allowing users to process both SiO2 and Si the system provides Maximum Value and return on investment.

High Speed, Highly Selective, Deep Si Etching is made possible using a unique plasma source and chamber specifically designed for the "Bosch Process".
Designed for R&D - easy to use, easy to maintain, low-cost / high-performance package!
SiO₂ Etching Kit is available as an option
Low Scalloping through high speed gas switching
Through Wafer etching (depth: 600μm)
SOI (silicon on insulator) notch prevention technology

Fabrication of MEMS devices (acceleration sensors, gyro sensors, actuators, etc)
Inkjet printer head
Through Silicon Via (TSV) for 3D packaging
Manufacturing of medical devices (μTAS, etc)