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Scientific Paper on AlGaN/GaN Metal-oxide-semiconductor HFET

Aug 5, 2010

Low-frequency Noise Measurements of AlGaN/GaN Metal-oxide-semiconductor Heterostructure Field-effect Transistors with HfAlO Gate Dielectric

C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, . Yang, V. Misra, and P. H. Handel
Microelectronics Materials and Device Laboratory, Virginia Commonwealth University

Mesa isolation was performed in a SAMCO inductively coupled plasma (ICP) system using a Cl based chemistry.
System used in the research: SAMCO ICP Etching System RIE-101iPH

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